6N139S(TA)-V
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  • 6N139S(TA)-V
  • 6N139S(TA)-V
  • 6N139S(TA)-V
  • 6N139S(TA)-V

6N139S(TA)-V

$0.76
Tax excluded

Description

The 6N138 and 6N139 devices each consists of an infrared emitting diode, optically coupled to a high gain split Darlington photo detector. They provide extremely high current transfer ratio between input and output, with access to a base terminal to adjust the gain bandwidth.These devices are packaged in an 8-pin DIP package and available in wide-lead spacing and SMD options.

Features

  • High current transfer ratio–2000% typical
  • High isolation voltage between input and output (Viso=5000 Vrms )
  • Guaranteed performance from 0°C to 70°C
  • Pb free and RoHS compliant.
  • UL and cUL approved(No. E214129)
  • VDE approved (No. 132249)
  • SEMKO approved
  • NEMKO approved
  • DEMKO approved
  • FIMKO approved

Applications

  • Digital Logic Ground Isolation
6N139S(TA)-V
Forward Current
1.6mA
Maximum Voltage
1.7V
Package
8 Pin DIP-DC
Isolation Voltage
5000Vrms
CTR (Current Transfer Ratio)
500