EL4502S(TA)-V
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  • EL4502S(TA)-V
  • EL4502S(TA)-V
  • EL4502S(TA)-V
  • EL4502S(TA)-V

EL4502S(TA)-V

$0.76
Tax excluded

Description

The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor. The devices are packaged in an 8-pin DIP package and available in wide-lead spacing and SMD option.

Features

  • High speed 1Mbit/s
  • High isolation voltage between input and output (Viso=5000 Vrms )
  • Wide operating temperature range of -55°C to 100°C
  • Pb free and RoHS compliant
  • UL and cUL approved
  • VDE approved
  • SEMKO approved
  • NEMKO approved
  • DEMKO approved
  • FIMKO approved
EL4502S(TA)-V
Forward Current
16mA
Maximum Voltage
1.8V
Package
8 Pin DIP-DC
Isolation Voltage
5000Vrms
CTR (Current Transfer Ratio)
19