EL2530
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  • EL2530
  • EL2530
  • EL2530
  • EL2530

EL2530

$1.52
Tax excluded

Description

The EL2530 and EL2531 dual channel devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor. The devices are packaged in an 8-pin DIP package and available in wide-lead spacing and SMD option.

Features

  • High speed 1Mbit/s
  • 10kV/Ξs min. common mode transient immunity (EL2611)
  • Guaranteed performance from -40 to 85℃
  • Logic gate output
  • High isolation voltage between input and output (Viso=5000 V rms )
  • Pb free and RoHS compliant.
  • UL and cUL approved(No. E214129)
  • VDE approved (No. 132249)
  • SEMKO approved
  • NEMKO approve...
EL2530
Forward Current
16mA
Maximum Voltage
1.8V
Package
8 Pin DIP-DC
Isolation Voltage
5000Vrms
CTR (Current Transfer Ratio)
7