EL817S1(A)(TU)-V
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  • EL817S1(A)(TU)-V
  • EL817S1(A)(TU)-V
  • EL817S1(A)(TU)-V
  • EL817S1(A)(TU)-V

EL817S1(A)(TU)-V

$0.11
Tax excluded

Description

The EL817 Series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.

Features

  • Current transfer ratio (CTR: 50~600% at IF =5mA; VCE =5V)
  • High isolation voltage between input and output    (Viso=5000 V rms )
  • Creepage distance >7.62 mm
  • Operating temperature up to +110°C
  • Compact small outline package
  • Pb free and RoHS compliant.
  • UL approved (No. E214129)
  • VDE approved (No. 132249)
  • SEMKO approved
  • NEMKO approved
  • DEMKO approved
  • FIMKO approved
  • CSA approved

Applications

  • Programmable Controllers
  • System Appliances; Measuring Instruments...
EL817S1(A)(TU)-V
Forward Current
20mA
Maximum Voltage
1.4V
Package
4 Pin DIP-DC
Mounting
SMD
Operating Temperature
-55°C to 110°C
Storage Temperature
-55°C to 125°C
Isolation Voltage
5000Vrms
CTR (Current Transfer Ratio)
80
Number of Pins
Quad