EL817S1(C)(TU)-VG
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  • EL817S1(C)(TU)-VG
  • EL817S1(C)(TU)-VG
  • EL817S1(C)(TU)-VG
  • EL817S1(C)(TU)-VG

EL817S1(C)(TU)-VG

$0.14
Tax excluded

Description

The EL817 Series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.

Features

  • Halogens free.
  • (Br < 900ppm; Cl < 900ppm; Br+Cl < 1500ppm).
  • Current transfer ratio.
  • (CTR: 50~600% at IF = 5mA; VCE = 5V).
  • High isolation voltage between input.
  • and output (Viso = 5000Vrms).
  • Creepage distance > 7.62mm.
  • Operating temperature up to +110°C.
  • Compact small outline package.
  • Compliance with EU REACH.
  • The product itself will remain within RoHS compliant version.
  • UL and cUL approved(No.E214129).
  • VDE approved (No.132249).
  • SEMKO approved.
  • NEMKO approved.
  • DEMKO approved.
  • FIMKO approved.
  • CQC ...
EL817S1(C)(TU)-VG
Forward Current
20mA
Maximum Voltage
1.4V
Package
4 Pin DIP-DC
Mounting
SMD
Operating Temperature
-55°C to 110°C
Storage Temperature
-55°C to 125°C
Isolation Voltage
5000Vrms
CTR (Current Transfer Ratio)
200
Number of Pins
4Pins