EL817S1(D)(TU)-VG
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  • EL817S1(D)(TU)-VG
  • EL817S1(D)(TU)-VG
  • EL817S1(D)(TU)-VG
  • EL817S1(D)(TU)-VG

EL817S1(D)(TU)-VG

$0.45
Tax excluded

Description

The EL817 Series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.

Features

  • Halogens free. (Br < 900ppm, Cl < 900ppm, Br+Cl < 1500ppm) Current transfer ratio (CTR: 50~600% at IF = 5mA, VCE = 5V) High isolation voltage between input and output (Viso = 5000Vrms ) Creepage distance > 7.62mm Operating temperature up to +110°C Compact small outline package Compliance with EU REACH. The product itself will remain within RoHS compliant version UL and cUL approved(No.E214129) VDE approved (No.132249) SEMKO approved NEMKO approved DEMKO approved FIMKO approved CQC approved

Applications

  • Programmable Controllers System Appliances
  • Measuring Instruments Tele...
EL817S1(D)(TU)-VG
Forward Current
20mA
Maximum Voltage
1.4V
Package
4 Pin DIP-DC
Mounting
SMD
Operating Temperature
-55°C to 110°C
Storage Temperature
-55°C to 125°C
Isolation Voltage
5000Vrms
CTR (Current Transfer Ratio)
300
Number of Pins
Quad