EL817S1(A)(TU)-FVG
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  • EL817S1(A)(TU)-FVG
  • EL817S1(A)(TU)-FVG
  • EL817S1(A)(TU)-FVG
  • EL817S1(A)(TU)-FVG

EL817S1(A)(TU)-FVG

$0.11
Tax excluded

Description

The EL817 Series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.

Features

  • Halogens free.
  • (Br < 900ppm; Cl < 900ppm; Br+Cl < 1500ppm)
  • Current transfer ratio
  • (CTR: 50~600% at IF = 5mA; VCE = 5V)
  • High isolation voltage between input
  • and output (Viso = 5000Vrms )
  • Creepage distance > 7.62mm
  • Operating temperature up to +110°C
  • Compact small outline package
  • Compliance with EU REACH.
  • The product itself will remain within RoHS compliant version
  • UL and cUL approved(No.E214129)
  • VDE approved (No.132249)
  • SEMKO approved
  • NEMKO approved
  • DEMKO approved
  • FIMKO approved
  • CQC approved ...
EL817S1(A)(TU)-FVG
Forward Current
20mA
Maximum Voltage
1.4V
Package
4 Pin DIP-DC
Mounting
SMD
Operating Temperature
-55°C to 110°C
Storage Temperature
-55°C to 125°C
Isolation Voltage
5000Vrms
CTR (Current Transfer Ratio)
80
Number of Pins
Quad