EL816S1(J)(TU)-V
search
  • EL816S1(J)(TU)-V

EL816S1(J)(TU)-V

$0.17
Tax excluded

Description

This series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.

Features

  • Compliance Halogens Free (Only copper leadframe) (Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm) Current transfer ratio (CTR: 50~600% at IF = 5mA, VCE = 5V) (CTR: 63~320% at IF = 10mA, VCE = 5V) High isolation voltage between input and output (Viso=5000Vrms) Creepage distance > 7.62mm Operating temperature up to +110°C Compact small outline package The product itself will remain within RoHS compliant version Compliance with EU REACH UL and cUL approved(No. E214129) VDE approved (No. 132249) SEMKO approved NEMKO approved DEMKO approved FIMKO approved CQC approved

Applications

  • Programmab...
EL816S1(J)(TU)-V
Mounting
SMD
Operating Temperature
-55°C to 110°C
Storage Temperature
-55°C to 125°C
Number of Pins
Quad