EL814S1(TA)-V
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  • EL814S1(TA)-V
  • EL814S1(TA)-V
  • EL814S1(TA)-V
  • EL814S1(TA)-V

EL814S1(TA)-V

$0.16
Tax excluded

Description

The EL814 Series of devices each consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in side-lead spacing and SMD option.

Features

  • Compliance Halogens Free (Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm)
  • AC input response
  • Current transfer ratio (CTR: Min. 20% at IF = ±1mA,VCE = 5V)
  • High isolation voltage between input and output (Viso = 5000 V rms )
  • Wide Operating temperature range -55~110ºC
  • High collector-emitter voltage VCEO = 80V
  • Compact dual-in-line package
  • Pb free
  • The product itself will remain within RoHS compliant version
  • Compliance with EU REACH
  • UL and cUL approved
  • VDE approved
  • SEMKO approved
  • NEMKO approved
  • DEMKO approved
EL814S1(TA)-V
Forward Current
20mA
Maximum Voltage
1.4V
Package
4 Pin DIP-AC
Isolation Voltage
5000Vrms
CTR (Current Transfer Ratio)
20