EL827S1(TA)
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  • EL827S1(TA)
  • EL827S1(TA)
  • EL827S1(TA)
  • EL827S1(TA)

EL827S1(TA)

$0.45
Tax excluded

Description

The EL827series devices each of consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 8-pin DIP package and available in wide-lead spacing and SMD option.

Features

  • Current transfer ratio (CTR: 50~600% at IF =5mA; VCE =5V)
  • High isolation voltage between input and output    (Viso=5000 V rms )
  • Compact small outline package
  • Pb free and RoHS compliant.
  • UL approved (No. E214129)
  • VDE approved (No. 132249)
  • SEMKO approved
  • NEMKO approved
  • DEMKO approved
  • FIMKO approved
  • CSA approved
  • CQC approved

Applications

  • Programmable Controllers
  • System Appliances; Measuring Instruments
  • Telecommunication Equipments
  • Home Appliance...
EL827S1(TA)
Forward Current
20mA
Maximum Voltage
1.4V
Package
8 Pin DIP-DC
Mounting
SMD
Operating Temperature
-55°C to 110°C
Storage Temperature
-55°C to 125°C
Isolation Voltage
5000Vrms
CTR (Current Transfer Ratio)
50
Number of Pins
8Pins