EL817(B)-VG
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  • EL817(B)-VG

EL817(B)-VG

$0.15
Tax excluded

Description

The EL817-G series of devices each consist of an infrared emitting diodes; optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.

Features

  • Halogens free. (Br <900 ppm ;Cl <900 ppm ; Br+Cl < 1500 ppm).
  • Current transfer ratio (CTR: 50~600% at IF =5mA; VCE =5V)
  • High isolation voltage between input and output    (Viso=5000 V rms )
  • Creepage distance >7.62 mm
  • Operating temperature up to +110°C
  • Compact small outline package
  • Compliance with EU REACH.
  • Pb free and RoHS compliant.
  • UL and cUL approved(No. E214129)
  • VDE approved (No. 132249)
  • SEMKO approved
  • NEMKO approved
  • DEMKO approved
  • FIMKO approved
  • CQC approved
EL817(B)-VG
Package
4-Pin DIP
Mounting
Through Hole
Operating Temperature
-55°C to 110°C
Storage Temperature
-55°C to 125°C
Number of Pins
Quad