EL816(B)-V
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  • EL816(B)-V
  • EL816(B)-V
  • EL816(B)-V
  • EL816(B)-V

EL816(B)-V

$0.17
Tax excluded

Description

The EL816 Series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.

Features

  • Compliance Halogens Free (Only copper leadframe)
  • (Br < 900 ppm; Cl < 900 ppm; Br+Cl < 1500 ppm)
  • Current transfer ratio
  • (CTR: 50~600% at IF = 5mA; VCE = 5V)
  • (CTR: 63~320% at IF = 10mA; VCE = 5V)
  • High isolation voltage between input
  • and output (Viso=5000Vrms)
  • Creepage distance > 7.62mm
  • Operating temperature up to +110°C
  • Compact small outline package
  • The product itself will remain within RoHS compliant version
  • Compliance with EU REACH
  • UL and cUL approved(No. E214129)
  • VDE approved (No. 132249)
  • SEMKO approved
  • NEMKO ap...
EL816(B)-V
Forward Current
20mA
Maximum Voltage
1.4V
Package
4 Pin DIP-DC
Mounting
Through Hole
Operating Temperature
-55°C to 110°C
Storage Temperature
-55°C to 125°C
Isolation Voltage
5000Vrms
CTR (Current Transfer Ratio)
130
Number of Pins
Quad