EL357N-G

$0.45

Tax excluded

Description
Product Details

Description

The EL357N-G series contains an infrared emitting diode, optically coupled to a phototransistor detector. The devices in a 4-pin small outline SMD package.

Features

Halogens free
Current transfer ratio (CTR: 50~600% at IF =5mA; VCE =5V)
High isolation voltage between input and output (Viso=3750 V rms )
Compact 4 Pin SOP with a 2.0 mm profile
Pb free and RoHS compliant.
UL approved (No. E214129)
VDE approved (No. 132249)
SEMKO approved
NEMKO approved
DEMKO approved
FIMKO approved
CSA approved (No. 1408633)

Applications

Dc-Dc Converters
Programmable Controllers
Telecommunication Equipments
Signal Transmission Between Circuits Of Different Potentials And Impedances<...

Reference EL357N-G

Forward Current: 20mA
Maximum Voltage: 1.4V
Package: 4 Pin SOP-DC
Mounting: SMD
Operating Temperature: -55°C to 110°C
Storage Temperature: -55°C to 125°C
Isolation Voltage: 3750Vrms
CTR (Current Transfer Ratio): 50
Number of Pins: Quad