EL357N(B)(TA)-G
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  • EL357N(B)(TA)-G
  • EL357N(B)(TA)-G
  • EL357N(B)(TA)-G
  • EL357N(B)(TA)-G

EL357N(B)(TA)-G

$0.45
Tax excluded

Description

The EL357N-G series contains an infrared emitting diode, optically coupled to a phototransistor detector. The devices in a 4-pin small outline SMD package.

Features

  • Halogens free (Br <900 ppm ;Cl <900 ppm ; Br+Cl < 1500 ppm).
  • Current transfer ratio (CTR: 50~600% at IF =5mA; VCE =5V).
  • High isolation voltage between input and output (Viso=3750 V rms).
  • Compact 4 Pin SOP with a 2.0 mm profile.
  • Compliance with EU REACH.
  • Pb free and RoHS compliant.
  • UL and cUL approved (No. E214129).
  • VDE approved (No. 132249).
  • SEMKO approved
  • NEMKO approved
  • DEMKO approved
  • FIMKO approved

Applications

  • Dc-Dc Converters.
  • Programmable Controllers.
  • Telecommunication Equipments.
  • Signal Transmissio...
EL357N(B)(TA)-G
Forward Current
20mA
Forward Voltage
1.2V
Maximum Voltage
1.4V
Package
4 Pin SOP-DC
Mounting
SMD
Operating Temperature
-55°C to 110°C
Storage Temperature
-55°C to 125°C
Isolation Voltage
3750Vrms
CTR (Current Transfer Ratio)
130