EL357N(C)(TB)-G
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  • EL357N(C)(TB)-G
  • EL357N(C)(TB)-G
  • EL357N(C)(TB)-G
  • EL357N(C)(TB)-G

EL357N(C)(TB)-G

$0.45
Tax excluded

Description

The EL357N-G series contains an infrared emitting diode, optically coupled to a phototransistor detector. The devices in a 4-pin small outline SMD package.

Features

  • Halogens free (Br <900 ppm ,Cl <900 ppm , Br+Cl < 1500 ppm) Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V) High isolation voltage between input and output (Viso=3750 V rms ) Compact 4 Pin SOP with a 2.0 mm profile Compliance with EU REACH Pb free and RoHS compliant UL and cUL approved (No. E214129) VDE approved (No. 132249) SEMKO approved NEMKO approved DEMKO approved FIMKO approved

Applications

  • Dc-Dc Converters Programmable Controllers Telecommunication Equipments Signal Transmission Between Circuits Of Different Potentials And Impedances
EL357N(C)(TB)-G
Forward Current
20mA
Maximum Voltage
1.4V
Package
4 Pin SOP-DC
Mounting
SMD
Operating Temperature
-55°C to 110°C
Storage Temperature
-55°C to 125°C
Isolation Voltage
3750Vrms
CTR (Current Transfer Ratio)
200
Number of Pins
Quad