CNY64S(A)(TA)-V
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  • CNY64S(A)(TA)-V
  • CNY64S(A)(TA)-V
  • CNY64S(A)(TA)-V
  • CNY64S(A)(TA)-V

CNY64S(A)(TA)-V

$1.52
Tax excluded

Description

The CNY64 and CNY65 series contains an infrared emitting diode optically coupled to a phototransistor. These devices are packaged in an 4-pin DIP package and providing a distance between input and output for highest safety requirement of >3mm.

Features

  • High Voltage
  • BVCEO=80V (min.)
  • Operating temperature up to +85°C
  • High isolation voltage between input and output
  • VIOTM = 8200 V perk for CNY64
  • VIOTM = 10000 V perk for CNY64-V Rated recurring peak voltage (repetitive)
  • VIORM = 2200 V
  • Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI ≥ 200
  • Thickness through insulation ≧3mm
  • Pb free and RoHS compliant.
  • CUL approved (No. E214129)
  • VDE approved (No. 40027351)
  • FIMKO approved (No. 25464)
CNY64S(A)(TA)-V
Forward Current
50mA
Maximum Voltage
2.0V
Package
4 Pin DIP-DC
Mounting
Through Hole
Operating Temperature
-55°C to 85°C
Storage Temperature
-55°C to 100°C
Isolation Voltage
8200Vrms
CTR (Current Transfer Ratio)
63
Number of Pins
Quad