The CNY17-X and CNY17F-X series of devices each consist of an infrared emitting diode optically coupled to a phototransistor. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.
Features
Current transfer ratios in selected narrow range groups
CNY17-1; CNY17F-1: 40-80%
CNY17-2; CNY17F-2: 63-125%
CNY17-3; CNY17F-3: 100-200%
CNY17-4; CNY17F-4:160-320%
High isolation voltage between input and output (Viso = 5000 Vrms)
Creepage distance > 7.6 mm
Operating temperature up to +110°C
The CNY17F-X series offers no external base connection for minimum noise susceptibility