Description:
EAPLP05RDEA1 is a high speed and high sensitive NPN silicon
NPN epitaxial planar phototransistor molded in a standard 5 mm package.
Due to its Black epoxy the device is sensitive to infrared radiation.
Features:
Fast response time
High photo sensitivity
Pb free
The product itself will remain within RoHS compliant version.
Applications:
Infrared applied system
Floppy disk drive
Camera
Package | 5mm Round |
Orientation | Top View |
Mounting | Through Hole |
Type | Phototransistor |
Off State Lens Color | Black |
Peak Wavelength | 940nm |
Min. Ic ON | 0.7mA |
Max. Dark Current / Count | 100nA |
Typ. Rise Time | 15uS |
Typ. Ic ON | 2mA |
Typ. Fall Time | 15uS |
Min. Operating Temp. | -25C |
Max. Operating Temp. | 85C |
Packaging | Bag |
Min. Storage Temp. | -40C |
Max. Storage Temp. | 100C |
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