Description:
This series contains an infrared emmiting diode optically coupled to a photo transistor. These devices are packaged in a 4-pin DIP package, providing a distance between input and output for highest safety requirement of >3mm.
Features:
High Voltage, BVceo=80V (min.)
Operating tempertaure up to +85C
High isolation voltage between input and output, Viso= 8200 Vrms
Rated recurring peak voltage (repetitive), VIORM=1000
Creepage current restance according to VDE 0303/IEC 60112 comparative tracking index CTI≥200
Thickness through insulation ≥ 3mm
Pb free and RoHS compliant
CLU approved (No. E214129)
VDE approved (No 40027351)
FIMKO approved (No. 25464)
Applications:
Switch mode power supply
Line Reciever
Computer peripheral interface
Microprocessor system interface
Cirts for safe protective seperation against electrical shock according to safety class II (reinforced isolation):
-for appl. class I - IV mains voltage ≤ 300 V
-for appl. class I - IV mains voltage ≤ 600 V
-for appl. class I - IV mains voltage ≤ 1000 V
according to DIN EN 60747-5-5
Package | 4-Pin DIP Wide Body |
Mounting | Through Hole |
Number of Pins | Quad |
Length | 8.56mm |
Width | 7.2mm |
Height | 6.01mm |
Number of Channels | Single |
Max. Forward current | 75mA |
Min. CTR | 50% |
Max. Fall Time | 18uS |
Max. Rise Time | 18uS |
Max. CTR | 300% |
Min. Isolation Voltage | 8200V |
Max. Saturation Voltage Vce | 0.3V |
Max. Power Dissipation | 250mW |
Min. Operating Temp. | -55C |
Max. Operating Temp. | 85C |
Packaging | Tube |
Min. Storage Temp. | -55C |
Max. Storage Temp. | 100C |
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