Description:
The CNY64S series contains an infrared emitting diode
optically coupled to a phototransistor.
These device is packaged in an 4-pin SMD package and
providing a distance between input and output for highest
safety requirement of >3mm.
Features:
High Voltage
BVCEO=80V (min.)
Operating temperature up to +85°C
High isolation voltage between input and output
VIOTM = 8200 V perk for CNY64
VIOTM = 10000 V perk for CNY64-V
Rated recurring peak voltage (repetitive)
VIORM = 2200 V
Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI ≥ 200
Thickness through insulation ≧3mm
Pb free and RoHS compliant.
CUL approved (No. E214129)
VDE approved (No. 40027351)
FIMKO approved (No. 25464)
Applications:
Switch mode power supply
Line receiver
Computer peripheral interface
Microprocessor system interface
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage ≤ 300 V
- for appl. class I - IV at mains voltage ≤ 600 V
- for appl. class I - III at mains voltage ≤ 1000 V according to DIN EN 60747-5-5
Package | 4-Pin DIP Wide Body |
Mounting | Through Hole |
Number of Pins | Quad |
Length | 8.56mm |
Width | 7.2mm |
Height | 5.71mm |
Number of Channels | Single |
Max. Forward current | 75mA |
Min. CTR | 50% |
Max. Fall Time | 18uS |
Max. Rise Time | 18uS |
Max. CTR | 300% |
Min. Isolation Voltage | 8200V |
Max. Saturation Voltage Vce | 0.3V |
Max. Power Dissipation | 250mW |
Min. Operating Temp. | -55C |
Max. Operating Temp. | 85C |
Packaging | Tape & Reel |
Min. Storage Temp. | -55C |
Max. Storage Temp. | 100C |
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