View larger Description:
The EL357N-G series contains an infrared emitting diode, optically coupled to a phototransistor
detector.
The devices in a 4-pin small outline SMD package.
Features:
Halogens free
Current transfer ratio
(CTR: 50~600% at IF =5mA, VCE =5V)
High isolation voltage between input and output (Viso=3750 V rms )
Compact 4 Pin SOP with a 2.0 mm profile
Pb free and RoHS compliant.
UL approved (No. E214129)
VDE approved (No. 132249)
SEMKO approved
NEMKO approved
DEMKO approved
FIMKO approved
CSA approved (No. 1408633)
Applications:
DC-DC Converters
Programmable controllers
Telecommunication equipments
Signal transmission between circuits of different potentials and impedances
| Number of Channels | Single |
| Packaging | Tape & Reel |
| Package | 4-Pin SOP |
| Number of Pins | Quad |
| Mounting | SMD |
| Min. Storage Temp. | -55C |
| Min. Operating Temp. | -55C |
| Min. Isolation Voltage | 3750V |
| Width | 4.1mm |
| Height | 2mm |
| Max. Forward current | 50mA |
| Max. Fall Time | 18uS |
| Max. CTR | 600% |
| Length | 4.4mm |
| Max. Rise Time | 18uS |
| Min. CTR | 50% |
| Max. Storage Temp. | 125C |
| Max. Saturation Voltage Vce | 0.2V |
| Max. Power Dissipation | 200mW |
| Max. Operating Temp. | 110C |
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