Description:
The EL817 series of devices each consist of an infrared emitting diodes, optically coupled to a
phototransistor detector.
They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Features:
Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V)
High isolation voltage between input and output (Viso=5000 V rms )
Creepage distance >7.62 mm
Operating temperature up to +110°C
Compact small outline package
Pb free and RoHS compliant.
UL approved (No. E214129)
VDE approved (No. 132249)
SEMKO approved
NEMKO approved
DEMKO approved
FIMKO approved
CSA approved
Applications:
Programmable controllers
System appliances, measuring instruments
Telecommunication equipments
Home appliances, such as fan heaters, etc.
Signal transmission between circuits of different potentials and impedances
Package | 4-Pin DIP Low Profile |
Mounting | SMD |
Number of Pins | Quad |
Length | 6.5mm |
Width | 4.58mm |
Height | 3.5mm |
Number of Channels | Single |
Max. Forward current | 60mA |
Min. CTR | 80% |
Max. Fall Time | 18uS |
Max. Rise Time | 18uS |
Max. CTR | 160% |
Min. Isolation Voltage | 5000V |
Max. Saturation Voltage Vce | 0.2V |
Max. Power Dissipation | 200mW |
Min. Operating Temp. | -55C |
Max. Operating Temp. | 110C |
Packaging | Tape & Reel |
Min. Storage Temp. | -55C |
Max. Storage Temp. | 125C |
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