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Part Number: EAPLP05RDEA2
IR Detector - Thru-Hole
Description:
High speed and high sensitive NPN silicon and NPN epitaxial planar phototransistor molded in a standard 5 mm package. Due to is black epoxy the device is sensitive to infrared radiation.
Features:
Fast response time.
High photo sensitivity.
Pb free.
The product itself will remain within RoHS compliant version.
Copliance with EU REACH.
Compliance Halogen Free.（Br＜900 ppm，Cl＜900ppm，Br+Cl＜1500ppm）
Applications:
Sensor
| Package | 5mm Round |
| Orientation | Top View |
| Mounting | Through Hole |
| Type | Phototransistor |
| Off State Lens Color | Black |
| Peak Wavelength | 940nm |
| Min. Ic ON | 0.7mA |
| Max. Dark Current / Count | 100nA |
| Typ. Rise Time | 15uS |
| Typ. Fall Time | 15uS |
| Max. Saturation Voltage Vce | 0.4V |
| Max. Power Dissipation | 75mW |
| Min. Operating Temp. | -25C |
| Max. Operating Temp. | 85C |
| Packaging | Bag |
| Min. Storage Temp. | -40C |
| Max. Storage Temp. | 100C |
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