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Each EL817-G product series device consists of infrared emitting diodes, and are optically coupled to a phototransistor detector.
They are packaged in a 4-pin DIP package and are available in wide-lead spacing and SMD option.
(Br < 900ppm, Cl < 900ppm, Br+Cl < 1500ppm).
Current transfer ratio.
(CTR: 50~600% at IF = 5mA, VCE = 5V).
High isolation voltage between input.
and output (Viso = 5000Vrms).
Creepage distance > 7.62mm.
Operating temperature up to +110°C.
Compact small outline package.
Compliance with EU REACH.
The product itself will remain within RoHS compliant version.
UL and cUL approved(No.E214129).
VDE approved (No.132249).
System appliances, measuring instruments.
Home appliances, such as fan heaters, etc.
Signal transmission between circuits of different potentials and impedances.
|Package||4-Pin DIP Low Profile|
|Number of Pins||4Pins|
|Number of Channels||Single|
|Max. Forward current||60mA|
|Typ. Fall Time||8uS|
|Max. Fall Time||18uS|
|Max. Rise Time||18uS|
|Min. Isolation Voltage||5000V|
|Max. Saturation Voltage Vce||0.2V|
|Max. Power Dissipation||200mW|
|Min. Operating Temp.||-55C|
|Max. Operating Temp.||110C|
|Packaging||Tape & Reel|
|Min. Storage Temp.||-55C|
|Max. Storage Temp.||125C|
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