Description
The CNY17-X and CNY17F-X series of devices each consist of an infrared emitting diode optically
coupled to a phototransistor.
They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.
Features:
Current transfer ratios in selected narrow range groups
CNY17-1, CNY17F-1: 40-80%
CNY17-2, CNY17F-2: 63-125%
CNY17-3, CNY17F-3: 100-200%
CNY17-4, CNY17F-4:160-320%
High isolation voltage between input and output
(Viso = 5000 Vrms)
Creepage distance > 7.6 mm
Operating temperature up to +110°C
The CNY17F-X series offers no external base connection
for minimum noise susceptibility
Compact dual-in-line package
Pb free and RoHS compliant.
UL and cUL approved(No. E214129)
VDE approved (No. 132249)
SEMKO approved
NEMKO approved
DEMKO approved
FIMKO approved
Applications
Power supply regulators
Digital logic inputs
Microprocessor inputs
Package | 6-Pin DIP Wide Lead |
Mounting | Through Hole |
Number of Pins | 6Pins |
Length | 6.5mm |
Width | 7.12mm |
Height | 3.5mm |
Number of Channels | Single |
Max. Forward current | 60mA |
Min. CTR | 160% |
Max. Fall Time | 10uS |
Max. Rise Time | 10uS |
Max. CTR | 320% |
Min. Isolation Voltage | 5000V |
Max. Saturation Voltage Vce | 0.3V |
Max. Power Dissipation | 100mW |
Min. Operating Temp. | -55C |
Max. Operating Temp. | 110C |
Packaging | Tube |
Min. Storage Temp. | -55C |
Max. Storage Temp. | 125C |
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