View larger Description:
The EAITRDA6 consists of an infrared emitting diode
and an NPN silicon phototransistor, encased oblique angle
(45°) on converging optical axis in a black Thermo-plastic
housing. The phototransistor receives radiation from the
IRED only, and avoids the noise from ambient light.
Features:
Fast response time
High analytic
High sensitivity
Cut-off visible wavelength λP=940nm
Pb Free
This product itself will remain within RoHS compliant version.
Applications:
Copier
Scanner
Non-contact Switching
For Direct PC Board
| Packaging | Bag |
| Orientation | Reflective |
| Mounting | Through Hole |
| Min. Storage Temp. | -40C |
| Min. Operating Temp. | -25C |
| Min. Ic ON | 0.1mA |
| Width | 4.2mm |
| Type | Top-View |
| Height | 6mm |
| Length | 11.54mm |
| Max. Forward Voltage | 1.5V |
| Max. Storage Temp. | 85C |
| Max. Saturation Voltage Vce | 0.4V |
| Max. Operating Temp. | 85C |
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