Description:
The EAITRDA6 consists of an infrared emitting diode
and an NPN silicon phototransistor, encased oblique angle
(45°) on converging optical axis in a black Thermo-plastic
housing. The phototransistor receives radiation from the
IRED only, and avoids the noise from ambient light.
Features:
Fast response time
High analytic
High sensitivity
Cut-off visible wavelength λP=940nm
Pb Free
This product itself will remain within RoHS compliant version.
Applications:
Copier
Scanner
Non-contact Switching
For Direct PC Board
Orientation | Reflective |
Mounting | Through Hole |
Type | Top-View |
Length | 11.54mm |
Width | 4.2mm |
Height | 6mm |
Min. Ic ON | 0.1mA |
Max. Forward Voltage | 1.5V |
Max. Saturation Voltage Vce | 0.4V |
Min. Operating Temp. | -25C |
Max. Operating Temp. | 85C |
Packaging | Bag |
Min. Storage Temp. | -40C |
Max. Storage Temp. | 85C |
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