Description:
Everlight Americas Infrared Emitting Diode(EAILP03SXEA0)
is a high intensity diode , molded in a water clear plastic package.
The device is spectrally matched with phototransistor , photodiode
and infrared receiver module.
Features:
High reliability
2.54mm lead spacing
Low forward voltage
Good spectral matching to Si photodetector
High radiant intensity
Pb free
The product itself will remain within RoHS compliant version.
Applications:
CCTV
Infrared applied system
Package | 3mm SuperFlux |
Orientation | Top View |
Mounting | Through Hole |
Type | Emitter |
Off State Lens Color | Water Clear |
Peak Wavelength | 850nm |
Viewing Angle | 20 deg. |
Test Current | 20mA |
Max. Forward current | 100mA |
Typ. Forward Voltage | 1.45V |
Max. Forward Voltage | 1.65V |
Min. Radiant Intensity | 15mW/sr |
Typ. Radiant Intensity | 29mW/sr |
Max. Pulsed Current | 1000mA |
Min. Operating Temp. | -40C |
Max. Operating Temp. | 85C |
Packaging | Bag |
Min. Storage Temp. | -40C |
Max. Storage Temp. | 100C |
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