Description:
The EL2530 and EL2531 dual channel devices each consist
of an infrared emitting diode, optically coupled to a high speed
photo detector transistor. A separate connection for the
photodiode bias and output-transistor collector increase the
speed by several orders of magnitude over conventional
phototransistor couplers by reducing the base-collector
capacitance of the input transistor.
The devices are packaged in an 8-pin DIP package and
available in wide-lead spacing and SMD option.
Features:
High speed 1Mbit/s
High isolation voltage between input and output (Viso=5000 Vrms )
Guaranteed performance from 0°C to 70°C
Wide operating temperature range of -40°C to 85°C
Pb free and RoHS compliant
UL approved (No. 214129)
VDE approved (No. 132249)
SEMKO approved
NEMKO approved
DEMKO approved
FIMKO approved
CSA approved
CQC approved
Applications:
Line receivers
Telecommunication equipments
Power transistor isolation in motor drives
Replacement for low speed phototransistor photo couplers
Feedback loop in switch-mode power supplies
Home appliances
High speed logic ground isolation
Package | 8-Pin DIP |
Mounting | Through Hole |
Type | 1Mbps Dual |
Number of Pins | 8Pins |
Length | 9.7mm |
Width | 6.6mm |
Height | 3.5mm |
Number of Channels | Dual |
Max. Forward current | 25mA |
Max. Forward Voltage | 1.8V |
Min. CTR | 19% |
Min. CMTI | 1kV/uS |
Max. Propagation Delay Tplh | 0.8uS |
Max. CTR | 50% |
Common Mode Transient Immunity at High (CMH) | 10kV/uS |
Min. Isolation Voltage | 5000V |
Max. Saturation Voltage Vce | 0.5V |
Max. Power Dissipation | 35mW |
Min. Operating Temp. | -40C |
Max. Operating Temp. | 100C |
Packaging | Tube |
Min. Storage Temp. | -40C |
Max. Storage Temp. | 125C |
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