Part Number: EL4502M-V

Description:
The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically
coupled to a high speed photo detector transistor. A separate connection for the photodiode bias
and output-transistor collector increase the speed by several orders of magnitude over conventional
phototransistor couplers by reducing the base-collector capacitance of the input transistor. The
devices are packaged in an 8-pin DIP package and available in wide-lead spacing and SMD option

Features:
High speed 1Mbit/s
High isolation voltage between input and output (Viso=5000 Vrms )
Guaranteed performance from 0°C to 70°C
Wide operating temperature range of -55°C to 100°C
Pb free and RoHS compliant
UL and cUL approved(No. E214129)
VDE approved (No. 132249)
SEMKO approved
NEMKO approved
DEMKO approved
FIMKO approved

Applications:
Line receivers
Telecommunication equipments
Power transistor isolation in motor drives
Replacement for low speed phototransistor photo couplers
Feedback loop in switch-mode power supplies
Home appliances
High speed logic ground isolation