Description
The 6N137, EL2601 and EL2611 are consists of an infrared emitting diode optically coupled to a high speed integrated
photo detector logic gate with a strobable output. It is packaged in a 8-pin DIP package and available in wide-lead
spacing and SMD options.
Features
High speed 10Mbit/s
10kV/μs min. common mode transient immunity (EL2611)
Guaranteed performance from -40 to 85 ℃
Logic gate output
High isolation voltage between input and output (Viso=5000 V rms )
Pb free and RoHS compliant.
UL approved (No. 214129)
VDE approved (No. 132249)
SEMKO approved
NEMKO approved
DEMKO approved
FIMKO approved
CSA approved (No. 2037145)
Applications
Ground loop elimination
LSTTL to TTL, LSTTL or 5 volt CMOS
Line receiver, data transmission
Data multiplexing
Switching power supplies
Pulse transformer replacement
Computer peripheral interface
High speed logic ground isolation
Package | 8-Pin DIP |
Mounting | SMD |
Type | 10Mbps |
Number of Pins | 8Pins |
Length | 9.7mm |
Width | 6.6mm |
Height | 3.5mm |
Number of Channels | Single |
Max. Forward current | 50mA |
Max. Forward Voltage | 1.8V |
Typ. Rise Time | 0.04uS |
Typ. Fall Time | 0.01uS |
Max. Propagation Delay Tplh | 0.075uS |
Min. Isolation Voltage | 5000V |
Max. Power Dissipation | 100mW |
Min. Operating Temp. | -40C |
Max. Operating Temp. | 85C |
Packaging | Tape & Reel |
Min. Storage Temp. | -55C |
Max. Storage Temp. | 125C |
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