View larger Description:
EAPLP03RDAA0 is a high speed and high sensitive NPN silicon
phototransistor molded in a standard φ3 mm package.
Due to the epoxy is water clear , the device is sensitive
to visible and near infrared radiation.
Features:
Fast response time
High photo sensitivity
Pb free
The product itself will remain within RoHS compliant version.
Applications:
Infrared applied system
Camera
Printer
Optoelectronic switch
| Peak Wavelength | 940nm |
| Packaging | Bag |
| Package | 3mm Round |
| Orientation | Top View |
| Off State Lens Color | Water Clear |
| Mounting | Through Hole |
| Min. Storage Temp. | -40C |
| Min. Operating Temp. | -25C |
| Min. Ic ON | 0.7mA |
| Type | Photodiode |
| Typ. Rise Time | 15uS |
| Typ. Ic ON | 2mA |
| Typ. Fall Time | 15uS |
| Max. Dark Current / Count | 100nA |
| Max. Storage Temp. | 85C |
| Max. Operating Temp. | 85C |
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